High-speed photoelectric detector structure and manufacturing method thereof

The invention discloses a high-speed photoelectric detector structure. An epitaxial wafer of the high-speed photoelectric detector structure comprises an InP substrate, a lower ohmic contact layer, a lower window layer, an absorption layer, an upper window layer and an upper ohmic contact layer, the lower ohmic contact layer, the lower window layer, the absorption layer, the upper window layer and the upper ohmic contact layer sequentially grow on the InP substrate from bottom to top, the epitaxial wafer is a mesa structure, and one side surface of the mesa structure is a light incident surface. The incident surface is provided with an antireflection film, the other side surface far away from the antireflection film is a light reflection surface, and the light reflection surface is provided with a high reflection film. A light incident direction of a photodetector is perpendicular to the direction of a drift electric field, the absorption layer is 0.1-3 mu m, the drift of carriers is fast, and a bandwidth is