A METHOD FOR FORMING A FILM OF A PEROVSKIT-LIKE MATERIAL

To improve the quality of semiconductor films, to reduce the culling of finished products, the parameters of which do not meet the established requirements in the method of forming a semiconductor film of a perovskite-like material, a layer of a perovskite-like material or a precursor of a perovskite-like material of the predefined thickness is deposited on the substrate, followed by a halogen layer until liquefaction of the layer, then the halogen is gradually removed from the substrate until it is completely removed, ensuring the gradual crystallization of the perovskite-like material on a substrate to form perovskite-like material grains larger than perovskite-like material grains of the original film. 为了提高半导体膜的质量，减少成品的剔除，其参数不能满足形成类钙钛矿材料的半导体膜的方法中的既定要求，类钙钛矿材料层或将预定厚度的类钙钛矿材料的前体沉积在基板上，然后沉积一卤素层直到该层液化，然后将卤素从基板上逐渐去除，直到完全去除为止，从而确保了类钙钛矿材料在基板上的逐渐结晶，形成比原始膜中类钙钛矿材料颗粒大的类钙钛矿材料颗粒。