WAFER INSPECTION METHOD AND INSPECTION DEVICE

Provided are a wafer inspection method and inspection device that make it possible to discern whether a wafer defect extends from the back surface to the front surface of the wafer, is only present on the front surface or back surface, or is only present inside the wafer. The inspection device emits infrared rays (IR) or X-rays onto an inspection surface (2) of a wafer (W), detects the intensity of transmitted light (TL) consisting of infrared rays or X-rays that have passed through the inspection surface, detects intensities for each prescribed surface area that the inspection surface has been divided into, determines the profile of a histogram indicating the relationship between the intensities for each prescribed surface area and the frequencies of occurrence of the intensities, and identifies a defect from the determined histogram profile and the characteristics of a histogram profile for a specific defect stored in advance. 提供能够识别是否是从晶圆的背面到达至正面的缺陷、仅存在于正面或者背面的缺陷、或仅存在于晶圆内部的缺陷的晶圆的检查方法及检查装置。检查装置向晶圆(W)的检查面(2)