ETCHING METHOD, DAMAGE LAYER REMOVAL METHOD, AND STORAGE MEDIUM

The invention provides an etching method, a damage layer removal method, and a storage medium. The etching method includes preparing a substrate having an etching target portion formed on a silicon-containing portion, plasma-etching the etching target portion of the substrate into a predetermined pattern by plasma of a processing gas containing a CF-based gas, and removing a damage layer formed due to implantation of C and F into the silicon-containing portion exposed at a bottom of the predetermined pattern by the plasma etching. The removing of the damage layer includes forming an oxide of the damage layer by supplying oxygen-containing radicals and fluorine-containing radicals and oxidizing the damage layer with the oxygen-containing radicals while etching the damage layer with the fluorine-containing radicals, and removing the oxide by a radical treatment or a chemical treatment with a gas. 本发明涉及蚀刻方法、损伤层的去除方法和存储介质。一种技术，其可以充分去除使用包含CF系气体的气体的等离子体蚀刻后的图案中生成的损伤层。一种蚀刻方法，其具备：准备具有在含硅部分上形成的蚀刻对象部的基板的工序；利用包含CF系气体的处理气