ELECTRONIC DEVICE AND OPERATING METHOD OF ELECTRONIC DEVICE

ELECTRONIC DEVICE AND OPERATING METHOD OF ELECTRONIC DEVICE

An electronic device may include a semiconductor memory. The semiconductor memory may include: a first variable resistance layer including antimony (Sb); a second variable resistance layer including antimony (Sb) with a content different from that of the first variable resistance layer, the second v...

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Bibliographische Detailangaben
1. Verfasser: KIM MYUNG-SEOB
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:An electronic device may include a semiconductor memory. The semiconductor memory may include: a first variable resistance layer including antimony (Sb); a second variable resistance layer including antimony (Sb) with a content different from that of the first variable resistance layer, the second variable resistance layer having a crystallization speed different from that of the first variable resistance layer; and a first electrode interposed between the first variable resistance layer and the second variable resistance layer. 电子设备可以包括半导体存储器。该半导体存储器可以包括：第一可变电阻层，其包含锑(Sb)；第二可变电阻层，其包含的锑(Sb)的含量与第一可变电阻层不同，第二可变电阻层的结晶速度与第一可变电阻层的结晶速度不同；以及第一电极，其介于第一可变电阻层与第二可变电阻层之间。