SUBSTRATE SUPPORT PEDESTAL AND PLASMA PROCESSING APPARATUS

The invention provides a substrate support pedestal and a plasma processing apparatus. The technique for responsively controlling temperature of a substrate placed on a substrate support table is provided. The substrate support pedestal includes: a first metallic member having a recess formed in an upper portion of the first metallic member; a second metallic member provided on the first metallic member and configured to seal the recess; a substrate support part provided on the second metallic member; and one or more thermoelectric elements disposed in the recess, wherein the recess is filled with a heat transfer medium. 本发明提供基板支承台和等离子体处理装置。提供用于响应性良好地控制载置于基板支承台的基板的温度的技术。在一个例示性的实施方式中提供一种基板支承台。基板支承台包括第1构件、第2构件、基板支承部以及一个以上的热电元件。第1构件在上部具有凹部，并为金属制。第2构件设于第1构件上，用于密封凹部，并为金属制。基板支承部设于第2构件上。热电元件配置于凹部。凹部由传热介质填满。