A silicon carbide power device having improved robustness and corresponding manufacturing method

Embodiments of the present disclosure relate to a silicon carbide power device having improved robustness and a corresponding manufacturing method. An electronic power device includes a substrate of silicon carbide (SiC), the substrate having a front surface and a rear surface, the front surface and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SIMONE RASCUNA, FRANCESCO LIZIO, ALFIO GUARNERA, MARIO GIUSEPPE SAGGIO, CLAUDIO CHIBBARO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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