A silicon carbide power device having improved robustness and corresponding manufacturing method

Embodiments of the present disclosure relate to a silicon carbide power device having improved robustness and a corresponding manufacturing method. An electronic power device includes a substrate of silicon carbide (SiC), the substrate having a front surface and a rear surface, the front surface and the rear surface being located in a horizontal plane and opposed to each other along a vertical axis transverse to the horizontal plane. The substrate includes an active region in which a plurality of doped regions are disposed and an edge region that is non-active, different from the active region, and surrounds the active region. At least in the edge region, the dielectric region is disposed over the front surface. A passivation layer is disposed over the front surface of the substrate and isin contact with the dielectric region in the edge region. The passivation layer includes at least one anchoring region extending through a thickness of the dielectric region at the edge region so asto define a mechanical anc