POWER AMPLIFIER WITH DECREASED RF RETURN CURRENT LOSSES

The present invention is related to a radio frequency 'RF' power amplifier package and to an electronic device comprising the same. The RF power amplifier package comprises a RF power transistor. According to the invention, each input finger of the RF power transistor physically extends for a larger part in a region in between the input side of the package and the input bond pads than in a regionin between the input bond pads and the output side of the package; and/or each output finger physically extends for a larger part in a region in between the output bond pads and the output side of thepackage than in a region in between the input side of the package and the output bond pads. 本发明涉及一种射频RF功率放大器封装和包括该射频RF功率放大器封装的电子设备。该RF功率放大器封装包括RF功率晶体管。根据本发明，RF功率晶体管的每一个输入引脚在封装的输入侧与输入键合焊盘之间的区域中的物理延伸比在输入键合焊盘与封装的输出侧之间的区域中的物理延伸大；和/或每个输出引脚在输出键合焊盘与封装的输出侧之间的区域中的物理延伸比在封装的输入侧与输出键合焊盘之间的区域中的物理延伸大。