Preparation method of infrared thermopile sensor for temperature and gas detection

The invention relates to a preparation method of an infrared thermopile sensor for temperature and gas detection. The preparation method comprises the following steps: processing a silicon wafer; digging a groove; growing a dielectric layer, firstly, thermally growing a silicon oxide layer, and then growing a polycrystalline silicon layer; performing ion implantation; etching the polycrystalline silicon by plasma to form a first layer of silicon strips; generating a silicon oxide isolation layer; etching the silicon oxide by plasma to form a second layer of silicon strips; growing a silicon oxide layer; etching a lead hole; carrying out metal connection, sputtering aluminum, photoetching an aluminum strip, and then carrying out corrosion forming to form a thermocouple pair structure of polycrystalline silicon and aluminum; alloying; evaporating a nickel layer under an inert gas condition; photoetching and etching the opening; and etching the cavity, subjecting the release structure todry etching, etching the