METHOD FOR DENSIFYING POROUS ANNULAR SUBSTRATES BY CHEMICAL VAPOUR INFILTRATION

The invention relates to a method for densifying porous annular substrates (18) by chemical vapour infiltration, the method comprising at least the following steps: providing a plurality of unitary modules (10) comprising a support plate (14) on which substrates are stacked, said support plate compr...

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Hauptverfasser: DUPONT REMY, BERTRAND SEBASTIEN, GOUJARD STEPHANE ROGER ANDRE, CLAUSSE OLIVIER, LAMOUROUX FRANCK, GARCIA JEAN-MICHEL, CHAMPAGNE MATTHIEU, ROUSTAND JEFF
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention relates to a method for densifying porous annular substrates (18) by chemical vapour infiltration, the method comprising at least the following steps: providing a plurality of unitary modules (10) comprising a support plate (14) on which substrates are stacked, said support plate comprising a gas inlet opening (14a) extended by an injection tube (16) arranged in an internal volume (17) formed by the central passages (18a) of the stacked substrates, said injection tube having gas injection apertures (16c) opening into the internal volume; forming stacks of unitary modules (10) inthe chamber (26) of a densification furnace; and injecting, into the stacks of unitary modules, a vapour phase containing a gas precursor of a matrix material to be deposited within the porosity of the substrates. 本发明提供一种通过化学气相渗透使多孔环形基材(18)致密化的方法,所述方法至少包括以下步骤:提供多个单元模块(10),所述单元模块包括在其上堆叠基材的支撑托盘(14),该支撑托盘包括进气开口(14a),该进气开口通过设置在内部体积(17)中的注入管(16)延伸,所述内部体积(17)通过所堆叠基材的中央通道(18a)形成,注入管包括通向内部体积的气体注入孔(16c),在致密化炉的封闭体(26)中形成单元模块(10)的堆叠