Resistive random access memory structure and manufacturing method thereof

The present invention provides a resistive random access memory structure and a manufacturing method thereof. The resistive random access memory structure comprises: a substrate having an array regionand a peripheral region; a first low-dielectric-constant dielectric layer, which is located in the peripheral area and has a dielectric constant of smaller than 3; a plurality of memory cells, whichare positioned on the substrate and are positioned in the array region; a gap filling dielectric layer, which is located in the array region, covers the memory cells and fills in space between the adjacent memory cells; a plurality of first conductive plugs, which are located in the gap filling dielectric layer, wherein each of the first conductive plugs is in contact with one of the memory cells;and a dummy memory unit, which is located at the junction of the array region and the peripheral region and is not in contact with any one of the first conductive plugs. According to the resistive random access memory structur