Semiconductor based on nano material and preparation method

The invention relates to the technical field of semiconductors, in particular to a semiconductor based on a nano material. The semiconductor comprises a semiconductor body, the semiconductor body comprises a lower insulating layer and a mask, a substrate is arranged on the outer wall of the top of the lower insulating layer, a barrier layer is arranged on the outer wall of the top of the substrate, and a tunneling oxide layer is arranged on the outer wall of the top of the barrier layer. A floating gate is arranged on the outer wall of the top of the tunneling oxide layer, an ONO layer is arranged on the outer wall of the top of the floating gate, and a control gate layer is arranged on the outer wall of the top of the ONO layer. The invention has the beneficial effects that a nitriding layer of the ONO layer is easily removed in an acid wet etching mode, the influence caused by over-etching is reduced, the effect of cleaning the side wall of the ONO layer is achieved, the defects of fences and small holes ar