Preparation method of IGZO array substrate

The invention discloses a preparation method of an IGZO array substrate. The method comprises the following steps: sequentially adding a glass substrate into acetone, deionized water and ethanol, ultrasonically cleaning, and blow-drying by an air knife; depositing a metal film on the surface of the glass substrate through a magnetron sputtering process, and performing patterning treatment to obtain a gate electrode; preparing an organic insulating layer on the surface of the gate electrode through a spin-coating method, and then performing thermal annealing to obtain an insulating layer; preparing an indium gallium zinc oxide semiconductor film on the insulating layer through a magnetron sputtering method, and performing patterning processing to obtain an active layer; depositing a metal layer on the insulating layer and the active layer through a magnetron sputtering process, and patterning the metal layer to obtain a source electrode and a drain electrode which are in contact with the two sides of the activ