Preparation method of Bi12SiO20-Bi2O2SiO3/rGO photocatalyst
The invention relates to a preparation method of a Bi12SiO20-Bi2O2SiO3/rGO photocatalyst, which utilizes the high conductivity and high specific surface area of graphene oxide (rGO) to load Bi12SiO20-Bi2O2SiO3 composite powder on the graphene oxide to promote the separation of photo-induced electron...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a preparation method of a Bi12SiO20-Bi2O2SiO3/rGO photocatalyst, which utilizes the high conductivity and high specific surface area of graphene oxide (rGO) to load Bi12SiO20-Bi2O2SiO3 composite powder on the graphene oxide to promote the separation of photo-induced electron-hole pairs, and the obtained product has high specific surface area, can effectively adsorb organicsolvents, is easy to recover and does not generate secondary pollution. The production process is simple, equipment is simple, and the period is short.
一种Bi12SiO20-Bi2O2SiO3/rGO光催化剂的制备方法,利用氧化石墨烯(rGO)的高导电性和高比表面积,通过将Bi12SiO20-Bi2O2SiO3复合粉体负载到氧化石墨烯上来促进光生电子-空穴对分离,所得产物具有高的比表面积,可以有效吸附有机溶剂且容易回收,不产生二次污染,且其生产工艺简单、设备简单、周期短。 |
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