AlGaAs/GaAs neutron detector with PIN microstructure

The invention provides an AlGaAs/GaAs neutron detector with a PIN microstructure. An n-type GaAs is used as a substrate layer, and a variable-doping variable-component n-type AlGaAs N layer, an intrinsic GaAs I layer, a variable-doping variable-component p-type AlGaAs P layer and a p-type GaAs ohmic contact cap layer are sequentially grown on the GaAs substrate layer; a SiO2 passivation layer is deposited on the p-type GaAs ohmic contact cap layer, and then the variable-doping variable-component n-type AlGaAs N layer, the intrinsic GaAs I layer, the variable-doping variable-component p-type AlGaAs P layer and the p-type GaAs ohmic contact cap layer are successively etched to form a microstructure; a p-type electrode layer and an n-type electrode layer are formed on the p-type GaAs ohmic contact cap layer and the GaAs substrate layer after overlay; and finally, the microstructure is filled with a neutron conversion layer. According to the invention, the carrier collection efficiency canbe improved, and the lea