METHOD OF SELECTIVE CHEMICAL MECHANICAL POLISHING COBALT, ZIRCONIUM OXIDE, POLY-SILICON AND SILICON DIOXIDE FILMS

A process for chemical mechanical polishing a substrate containing cobalt, zirconium oxide, poly-silicon and silicon dioxide, wherein the cobalt, zirconium, and poly-silicon removal rates are selective over silicon dioxide. The chemical mechanical polishing composition includes water, a benzyltrialkyl quaternary ammonium compound, cobalt chelating agent, corrosion inhibitor, colloidal silica abrasive, optionally a biocide and optionally a pH adjusting agent, and a pH greater than 7, and the chemical mechanical polishing compositions are free of oxidizing agents. 一种用于化学机械抛光衬底的方法，所述衬底含有钴、氧化锆、多晶硅和二氧化硅，其中所述钴、锆、和多晶硅去除速率选择性地优先于二氧化硅。所述化学机械抛光组合物包含水，苄基三烷基季铵化合物，钴螯合剂，腐蚀抑制剂，胶体二氧化硅磨料，任选地杀生物剂和任选地pH调节剂，并且pH大于7，并且所述化学机械抛光组合物不含氧化剂。