Memory element consisting of static random access memory

The invention discloses a memory element composed of a static random access memory, which comprises a six-transistor static random access memory unit. The six-transistor static random access memory unit includes : a first inverter comprising a first pull-up transistor, a first pull-down transistor and a first storage node; a second inverter comprising a second pull-up transistor, a second pull-down transistor and a second storage node, wherein the first storage node is connected with a grid electrode of the second pull-up transistor and a grid electrode of the second pull-down transistor; a switching transistor which is connected with the second storage node, a grid electrode of the first pull-up transistor and a grid electrode of the first pull-down transistor; and an access transistor which is connected with a grid electrode of the first pull-up transistor and a grid electrode of the first pull-down transistor, wherein a grid electrode of the switching transistor is not directly connected with a grid electr