Wafer surface LD type developing linear photoresist defect monitoring method and monitoring system

The invention discloses a wafer surface LD type developing linear photoresist defect monitoring method. The method comprises the steps of periodically triggering automatic optical detection on a developing LD type nozzle; judging whether the LD type nozzle is polluted or not through automatic optical detection, and if not, enabling the machine to perform normal production; if pollution occurs, triggering the LD type nozzle to clean; and carrying out automatic optical detection again after cleaning, judging whether pollution occurs or not, if not, triggering the machine to perform production, and if not, cleaning and carrying out automatic optical detection again to judge whether pollution occurs or not. The invention further discloses a wafer surface LD type developing linear photoresist defect monitoring system. According to the invention, a scheme of obtaining the linear photoresist defect residue of the wafer by monitoring afterwards and reverse derivation in the prior art is improved into a scheme of acti