STACKED CAPACITOR

The invention discloses a stacked capacitor. An integrated circuit (IC) includes a substrate (100) and a first capacitor (C1) on the substrate (100). The first capacitor has a first width (W1). A first dielectric layer (108) is provided on a side surface of the first capacitor (C1) facing the substrate (100). Further, the second capacitor (C2) is present on a side of the first dielectric layer (108) opposite to the first capacitor (C1). The second capacitor (C2) has a second width (D1) smaller than the first width (W1). The IC also has a second dielectric layer (126) and a first metal layer (134). The second dielectric layer (126) is located on a side of the second capacitor (C2) opposite the first dielectric layer (108). The first metal layer (134) is located on a side of the second dielectric layer (126) opposite the second capacitor (C2). 本申请公开了堆叠电容器。一种集成电路(IC)包括基板(100)和在基板(100)上的第一电容器(C1)。第一电容器具有第一宽度(W1)。在第一电容器(C1)的与基板(100)相对的侧面设置第一介电层(108)。此外，第二电容器(C2)存在于第一介电层(108)的与第一电容器(C1)相对的侧面上。第二电容器(C2)具有小于第一宽度(W1)的