METHOD OF CONTROLLING REPAIR OF VOLATILE MEMORY DEVICE AND STORAGE DEVICE

The invention provides a method of controlling repair of a volatile memory device and a storage device. A test operation condition of a volatile memory device is set such that an error probability isincreased based on the test operation condition, compared to a normal operation condition for a normal operation of the volatile memory device. A test mode is set with respect to a test object regioncorresponding to at least a portion of a memory cell array included in the volatile memory device. A test operation of the volatile memory device is performed based on the test operation condition during the test mode to detect error position information of errors in data stored in the test object region. A runtime repair operation is performed with respect to the volatile memory device based on the error position information. 提供了一种控制易失性存储器装置的修复的方法和存储装置。设置易失性存储器装置的测试操作条件，使得与用于易失性存储器装置的正常操作的正常操作条件相比，错误概率基于测试操作条件增大。针对与包括在易失性存储器装置中的存储器单元阵列的至少一部分对应的测试对象区域设置测试模式。在测试模式期间基于测试操作条件执行易失性存储器装置的测试操作，以检测存储在测试对象区域中的数据中的错误的错误位置信息。基于错