Optical relay based on gallium nitride material

The invention discloses an optical relay based on a gallium nitride material, and the preparation mode of internal devices of the whole optical relay is that a gallium nitride light-emitting device, agallium nitride photoelectric conversion device and a gallium nitride high-electron-mobility transistor are prepared in three independent chips, and then are packaged and integrated. Compared with atraditional semiconductor relay based on a Si-based device, the device based on the GaN material is high in photoelectric conversion efficiency, the response speed of the device is increased, and meanwhile higher breakdown voltage is achieved. In addition, the GaN-based light emitting device and the photoelectric conversion device are integrated on the same substrate, and the light emitting device, the photoelectric conversion device and the high-electron-mobility transistor are integrated on the same substrate and packaged, so that the device performance is improved, the integrated packagingsteps are reduced, and mean