MEMORY CELL, MEMORY DEVICE, AND METHOD FOR FORMING MEMORY DEVICE

Various embodiments of the present disclosure are directed towards a memory cell including a data storage structure. A top electrode overlies a bottom electrode. The data storage structure is disposedbetween the top electrode and the bottom electrode. The data storage structure includes a first data storage layer, a second data storage layer, and a third data storage layer. The second data storage layer is disposed between the first and third data storage layers. The second data storage layer has a lower bandgap than the third data storage layer. The first data storage layer has a lower bandgap than the second data storage layer. 本公开的各种实施例涉及包含数据存储结构的存储单元。顶部电极上覆于底部电极。数据存储结构安置于顶部电极与底部电极之间。数据存储结构包含第一数据存储层、第二数据存储层以及第三数据存储层。第二数据存储层安置于第一数据存储层与第三数据存储层之间。第二数据存储层具有比第三数据存储层低的带隙。第一数据存储层具有比第二数据存储层低的带隙。