Preparing LT, doping LN crystal with periodic electric domain at room temp. and use

Preparing LT, doping LN crystal with periodic electric domain at room temp. and use

The scheme solved by the invented technology adopts 0.2-0.5 mm thickness LT cut or doped LN single-domain chip, the minus or plus C surfaces are all finish ground and polished, On+ C surface the metal grid with A=3-20 mu meter period is made as electrode by utilizing photolithographic technique, the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZHU SHINING, ZHU YONGYUAN, MIN NAIBEN
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:The scheme solved by the invented technology adopts 0.2-0.5 mm thickness LT cut or doped LN single-domain chip, the minus or plus C surfaces are all finish ground and polished, On+ C surface the metal grid with A=3-20 mu meter period is made as electrode by utilizing photolithographic technique, the flat electrode is plated on the corresponding region of -C surface. High voltage rectangular pulse is positively applied between the two electrodes, its intensity E=20KV-30KV/mm. The applied time is the pulse width and is about 10 ms-1s.