Two-dimensional layered tellurium-doped germane and preparation method thereof

The invention discloses a two-dimensional layered tellurium-doped germane and a preparation method thereof. The preparation method comprises the following steps of: encapsulating Ca, GeTe and Ge in atubular furnace according to a stoichiometric ratio, carrying out program temperature control to obtain a CaGe2-2xTe2x (x is equal to 0.01-0.05) precursor, and reacting the obtained precursor with hydrochloric acid at a low temperature to obtain the two-dimensional layered semiconductor material tellurium-doped germane HGe1-xTex (x is equal to 0.01-0.05). The two-dimensional material has great potential application in the aspects of photoelectric devices, energy storage, photocatalysis and the like. 本发明公开一种二维层状碲掺杂锗烷及制备方法，将Ca、GeTe、Ge按化学计量比封装在在管式炉中进行程序控温得到CaGe2-2xTe2x(x＝0.01-0.05)前驱体,将得到的前驱体与盐酸在低温下进行反应，即可得到二维层状的半导体材料碲掺杂锗烷HGe1-xTex(x＝0.01-0.05)。这种二维材料在光电器件、储能、光催化等方面具有较大的潜在应用。