Semiconductor device and forming method thereof

One aspect of the invention provides a forming method of a semiconductor device. The method includes forming a first dummy gate and a second dummy gate over a fin that protrudes above a substrate; replacing the first dummy gate and the second dummy gate with a first metal gate and a second metal gate, respectively; forming a dielectric cut pattern between the first and the second metal gates, thedielectric cut pattern extending further from the substrate than the first and the second metal gates; forming a patterned mask layer over the first metal gate, the second metal gate, and the dielectric cut pattern, an opening in the patterned mask layer exposing a portion of the first metal gate, a portion of the second metal gate, and a portion of the dielectric cut pattern underlying the opening; filling the opening with a first electrically conductive material; and recessing the first electrically conductive material below an upper surface of the dielectric cut pattern. 本申请一方面提供一种形成半导体器件的方法，包括：在鳍部上方形成第一伪栅极和第二伪栅极，所