FINFET CONTACT AND METHOD FOR FORMING SAME

The invention discloses an FINFET contact and a method for forming the same. A device includes a semiconductor fin protruding from a substrate, a first gate stack over the semiconductor fin and a second gate stack over the semiconductor fin, a first source/drain region in the semiconductor fin adjacent the first gate stack and a second source/drain region in the semiconductor fin adjacent the second gate stack, a first layer of a first dielectric material on the first gate stack and a second layer of the first dielectric material on the second gate stack, a first source/drain contact on the first source/drain region and adjacent the first gate stack, a first layer of a second dielectric material on a top surface of the first source/drain contact, and a second source/drain contact on the second source/drain region and adjacent the second gate stack, wherein the top surface of the second source/drain contact is free of the second dielectric material. 本公开涉及FINFET接触及其形成方法。一种器件，包括：半导体鳍，从衬底突出；位于半导体鳍上方的第一栅极堆叠和位于半导体鳍