FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME

Disclosed are a fin field-effect transistor device and a method of forming the same. A method of forming a semiconductor device includes forming a first dummy gate structure and a second dummy gate structure over a fin protruding above a substrate, where the first dummy gate structure and the second dummy gate structure are surrounded by a dielectric layer; and replacing the first dummy gate structure and the second dummy gate structure with a first metal gate and a second metal gate, respectively, where the replacing includes: removing the first and the second dummy gate structures to form afirst recess and a second recess in the dielectric layer, respectively; forming a gate dielectric layer in the first recess and in the second recess; forming an N-type work function layer and a capping layer successively over the gate dielectric layer in the second recess but not in the first recess; and filling the first recess and the second recess with an electrically conductive material. 本公开涉及鳍式场效应晶体管器件及其形成方法。一种形成半导体器