Spin orbit moment magnetic random access memory with single word line

The invention belongs to the technical field of memories, and particularly relates to a spin orbit moment magnetic random access memory with a single word line. The memory unit of the memory comprisesa heavy metal conductive layer, a magnetoresistive element and two switching elements; the magnetore...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHEN DEYANG, ZHANG XUNMING, ZHAO CHENYANG, XUE XIAOYONG, YANG HEYONG, FANG JINBEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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