Spin orbit moment magnetic random access memory with single word line

The invention belongs to the technical field of memories, and particularly relates to a spin orbit moment magnetic random access memory with a single word line. The memory unit of the memory comprisesa heavy metal conductive layer, a magnetoresistive element and two switching elements; the magnetoresistive element has three layers, namely a magnetic material layer with a fixed magnetization direction, a non-magnetic material layer and a magnetic material layer with a variable magnetization direction; the first switching element is used for controlling on or off of a write-in path of the storage unit, and the second switching element is used for controlling on or off of a read path of the storage unit; when the first switching element is an NMOS transistor, the second switching element isa PMOS transistor; when the first switching element is a PMOS transistor, the second switching element is an NMOS transistor. According to the spin orbital moment magnetic random access memory, the NMOS transistor and the PMOS