FILM FORMING MATERIAL FOR LITHOGRAPHY, FILM FORMING COMPOSITION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN

The present invention addresses the problem of providing a film forming material for lithography, etc. to which a wet process is applicable and which is useful for forming a photoresist underlayer film having excellent heat resistance, etching resistance, characteristics embedding into a stepped sub...

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Bibliographische Detailangaben
Hauptverfasser:	YAMADA KOICHI, UENO MASAYOSHI, MAKINOSHIMA TAKASHI, ECHIGO MASATOSHI, CHIBA AKIFUMI, HORIUCHI JUNYA, SUGITO KEN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	The present invention addresses the problem of providing a film forming material for lithography, etc. to which a wet process is applicable and which is useful for forming a photoresist underlayer film having excellent heat resistance, etching resistance, characteristics embedding into a stepped substrate, and film flatness. The problem can be solved by a film forming material for lithography containing a compound having a group of formula (0). 本发明的课题在于，提供：可应用湿式工艺、对用于形成耐热性、耐蚀刻性、向台阶基板的埋入特性及膜的平坦性优异的光致抗蚀剂下层膜有用的光刻用膜形成材料等。前述课题可以通过含有具有下述式(0)的基团的化合物的光刻用膜形成材料而解决。