Three-dimensional ferroelectric memory and manufacturing method thereof

The invention provides a three-dimensional ferroelectric memory and a manufacturing method thereof, the ferroelectric memory comprises a memory cell array, each memory cell comprises a transistor anda three-dimensional ferroelectric capacitor connected with the transistor, each ferroelectric capacitor comprises a first electrode, a second electrode and a ferroelectric material layer located between the first electrode and the second electrode, after a ferroelectric capacitor is deposited after a deep hole structure is formed, the capacitor structure outside the deep hole structure is etched and removed in an etching mode, and an insulating protection layer is formed on a capacitor layer. The ferroelectric memory formed through the method can reduce the manufacturing difficulty, improve the insulating reliability between electrodes and improve the product performance. 本发明提供了一种三维铁电存储器及其制造方法，该铁电存储器包括存储单元阵列，每个存储单元包括晶体管和与晶体管连接的三维铁电电容，所述铁电电容包括第一电极、第二电极和位于第一电极和第二电极之间的铁电材料层，其中在形成深孔结构沉积完铁电电容后采用刻蚀的方式刻蚀去除深孔结构外的电容结构并在电容层