Memory and forming method thereof

The invention provides a memory and a forming method thereof. A node contact window is defined by utilizing a bit line and an insulating line, a contact plug filling the node contact window is enabledto protrude upwards out of the node contact window, adjacent contact plugs are further spaced by utilizing a spacing structure, and a first gap is further formed in the spacing structure. Therefore,the dielectric constant of the dielectric material between the adjacent contact plugs is reduced, and the parasitic effect of the device is effectively improved. 本发明提供了一种存储器及其形成方法。利用位线和绝缘线界定出节点接触窗，并使填充在节点接触窗中的接触插塞还向上凸出节点接触窗，并进一步利用间隔结构间隔相邻的接触插塞，以及所述间隔结构中还形成有第一空隙，如此即有利于降低相邻的接触插塞之间的介质材料的介电常数，有效改善器件的寄生效应。