Low-resistance antistatic functional non-woven fabric and production process thereof
The invention discloses a low-resistance antistatic functional non-woven fabric and a production process thereof. The problem of poor compatibility with CeO2/Cu/silicon carbide fibers is solved by modifying the polypropylene fibers with the complex protein, and the antibacterial activity of the non-...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a low-resistance antistatic functional non-woven fabric and a production process thereof. The problem of poor compatibility with CeO2/Cu/silicon carbide fibers is solved by modifying the polypropylene fibers with the complex protein, and the antibacterial activity of the non-woven fabric is improved; the silicon carbide fibers are subjected to surface modification by combining direct-current and radio-frequency magnetron sputtering technologies, so that the antistatic property and the anti-ultraviolet function of the non-woven fabric are improved, the application rangeof the non-woven fabric is expanded, and the service life is prolonged. The two antistatic agent mechanisms are respectively designed as follows: the first mechanism is that one side of phenolic hydroxyl in phenolic hydroxyl polyoxyethylene ether molecules is placed in the air and easily absorbs moisture in the environment to form hydrogen bonds, so that a monomolecular conductive layer is formed,and generated electrostat |
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