Radiation ion detector device structure with MOS switch

The invention discloses a novel irradiation ion detector device structure and relates to a microelectronic technology and a semiconductor technology. The novel irradiation ion detector device structure is based on a bulk silicon enhanced NMOS; an irradiation sensitive region is added between active region channels of a P substrate through STI shallow trench isolation; the irradiation sensitive region is mainly composed of SiO2; and when the MOS is in a working state and the total irradiation dose is large, electrons are induced in the SiO2 irradiation sensitive region, so that a leakage channel between a drain and a source is formed, and therefore, the purpose of detecting irradiation is achieved. The invention aims to provide the radiation ion detector device structure with the MOS switch; and the drain current Id of the device is calculated, so that the total dose of external radiation and the influence of the external radiation can be measured. 一种新型的辐照离子探测器器件结构，涉及微电子技术和半导体技术。本发明是一种基于体硅增强型NMOS，并通过STI浅槽隔离在P衬