Preparation method of glass micro-channel radiator for gallium nitride power amplifier chip
The invention discloses a preparation method of a glass micro-channel radiator for a gallium nitride power amplifier chip, which comprises the following steps: preparing at least three photolithographic glass wafers, namely a glass wafer A, a glass wafer B and a glass wafer C; etching a TGV through...
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| creator | QIN YUELI WANG CHUNFU LI YANRUI LI YANGYANG ZHANG JIAN WANG WENBO LU QIAN XIANG WEIWEI JIANG MIAOMIAO |
| description | The invention discloses a preparation method of a glass micro-channel radiator for a gallium nitride power amplifier chip, which comprises the following steps: preparing at least three photolithographic glass wafers, namely a glass wafer A, a glass wafer B and a glass wafer C; etching a TGV through hole in the glass wafer A, etching a micro-channel structure and a liquid inlet/outlet B in the glass wafer B, communicating the micro-channel structure and the liquid inlet/outlet B through a shunt network, and etching a liquid inlet/outlet C in the glass wafer C; performing a solid electroplatingprocess on the A glass wafer to obtain a TGV solid interconnection structure; connecting film layers are arranged on the lower surface of the glass wafer A, the surfaces of the two sides of the glasswafer B and the upper surface of the glass wafer C respectively; sequentially bonding the glass wafer A, the glass wafer B and the glass wafer C to form a composite wafer; according to the composite wafer, a single micro-chann |
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etching a TGV through hole in the glass wafer A, etching a micro-channel structure and a liquid inlet/outlet B in the glass wafer B, communicating the micro-channel structure and the liquid inlet/outlet B through a shunt network, and etching a liquid inlet/outlet C in the glass wafer C; performing a solid electroplatingprocess on the A glass wafer to obtain a TGV solid interconnection structure; connecting film layers are arranged on the lower surface of the glass wafer A, the surfaces of the two sides of the glasswafer B and the upper surface of the glass wafer C respectively; sequentially bonding the glass wafer A, the glass wafer B and the glass wafer C to form a composite wafer; according to the composite wafer, a single micro-chann</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TRANSPORTING |
| title | Preparation method of glass micro-channel radiator for gallium nitride power amplifier chip |
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