Preparation method of glass micro-channel radiator for gallium nitride power amplifier chip
The invention discloses a preparation method of a glass micro-channel radiator for a gallium nitride power amplifier chip, which comprises the following steps: preparing at least three photolithographic glass wafers, namely a glass wafer A, a glass wafer B and a glass wafer C; etching a TGV through...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a preparation method of a glass micro-channel radiator for a gallium nitride power amplifier chip, which comprises the following steps: preparing at least three photolithographic glass wafers, namely a glass wafer A, a glass wafer B and a glass wafer C; etching a TGV through hole in the glass wafer A, etching a micro-channel structure and a liquid inlet/outlet B in the glass wafer B, communicating the micro-channel structure and the liquid inlet/outlet B through a shunt network, and etching a liquid inlet/outlet C in the glass wafer C; performing a solid electroplatingprocess on the A glass wafer to obtain a TGV solid interconnection structure; connecting film layers are arranged on the lower surface of the glass wafer A, the surfaces of the two sides of the glasswafer B and the upper surface of the glass wafer C respectively; sequentially bonding the glass wafer A, the glass wafer B and the glass wafer C to form a composite wafer; according to the composite wafer, a single micro-chann |
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