METHOD AND APPARATUS FOR PROCESSING WAFERS

An apparatus for providing plasma processing is provided. A plasma processing chamber is provided. A first turbopump with an inlet is in fluid connection with the plasma processing chamber and an exhaust. A gas source provides gas to the plasma processing chamber. At least one gas line is in fluid connection between the gas source and the plasma processing chamber. At least one bleed line is in fluid connection with the at least one gas line. At least one gas line valve is on the at least one gas line located between, where the at least one bleed line is connected to the at least one gas lineand the plasma processing chamber. At least one bypass valve is on the at least one bleed line. 提供了一种用于提供等离子体处理的装置。提供等离子体处理室。具有入口的第一涡轮泵流体连接该等离子体处理室和排气部。气体源提供气体至该等离子体处理室。至少一根气体管线流体连接在该气体源与该等离子体处理室之间。至少一根排放管线与该至少一根气体管线流体连接。至少一个气体管线阀在该至少一根气体管线上并且定位在该至少一根排放管线与该至少一根气体管线连接的位置与该等离子体处理室之间。至少一个旁通阀位于该至少一根排放管线上。