Manufacturing method of power semiconductor device and power semiconductor device

The invention provides a manufacturing method of a power semiconductor device and the power semiconductor device, and solves problems that in order to improve a current control capability of a siliconcarbide MOSFET, the size of the device is reduced so that an ohmic contact area of a source electrod...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LUO YEHUI, LUO HAIHUI, GONG ZHIYU, ZHAO YANLI, LI CHENGZHAN, CHEN XIMING, WANG YAFEI, WEI WEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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