Manufacturing method of power semiconductor device and power semiconductor device

The invention provides a manufacturing method of a power semiconductor device and the power semiconductor device, and solves problems that in order to improve a current control capability of a siliconcarbide MOSFET, the size of the device is reduced so that an ohmic contact area of a source electrode is reduced, and an ohmic contact resistance proportion of a source electrode region of the deviceis increased. The method comprises the following steps: providing a first conductive type substrate; forming a first conductive type drift layer on the first conductive type substrate; forming a second conductive type doped layer and a second conductive type buried layer on the first conductive type drift layer; forming a first conductive type doped layer in a partial region of the second conductive type doped layer; forming gate structures on an upper surface of the first conductive type doped layer, the upper surface of the second conductive type doped layer and parts of the upper surface of the first conductive typ