Memory element test circuit and memory element test method

The invention discloses a storage element test circuit and a storage element test method. The storage element testing circuit is used for testing a storage element and comprises a storage circuit, a comparison circuit and a control circuit. The storage circuit stores test data. The comparison circuit is coupled to the storage circuit. The control circuit is coupled with the storage circuit, the comparison circuit and the storage element and used for executing the following steps to test the storage element: writing the test data into the storage element; controlling the storage element to enter a low power consumption mode; controlling the storage element to enter a function mode; and controlling the comparison circuit to compare output data of the storage element with the test data. 本发明揭露了存储元件测试电路及存储元件测试方法。存储元件测试电路用来测试一存储元件，包括一储存电路、一比较电路及一控制电路。该储存电路储存一测试数据。该比较电路耦接该储存电路。该控制电路耦接该储存电路、该比较电路及该存储元件，用来执行以下步骤以测试该存储元件：将该测试数据写入该存储元件；控制该存储元件进入一低功耗模式；控制该存储元件进入一功能模式；以及控制该比较电路比较该存储元件的一输出数据与该测试数据。