Memory device and method for operating same

A memory device includes: a bay comprising a plurality of word lines, a plurality of bit lines, and a memory cell connected to a first word line of the plurality of word lines and a first bit line ofthe plurality of bit lines, a row decoder configured to bias at least one word line of the word lines adjacent to the first word line and float remaining non-adjacent word lines of the plurality of word lines not adjacent to the first word line, in an access operation associated with the memory cell, and a column decoder configured to bias at least one bit line of the bit lines adjacent to the first bit line and float remaining non-adjacent bit lines of the plurality of bit lines not adjacent to the first bit line, in the access operation. 一种存储器件包括：板，包括多个字线、多个位线、以及与多个字线中的第一字线和多个位线中的第一位线连接的存储单元；行解码器，被配置为在与存储单元相关联的存取操作中，将字线中的与第一字线邻近的至少一个字线偏置，并且将多个字线中的与第一字线不邻近的其余非邻近字线浮置；以及列解码器，被配置为在存取操作中，将位线中的与第一位线邻近的至少一个位线偏置，并且将多个位线中的与第一位线不邻近的其余非邻近位线浮置。