Fast fail support for error correction in non-volatile memory

Disclosed are devices, systems and methods for improving fast fail support for error correction in non-volatile memory. An exemplary method includes (a) receiving a codeword from a read operation in afast fail mode, (b) initially configuring a maximum number of iterations (Nmax) and a set of values...

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Hauptverfasser: LYU XUANXUAN, ASADI MEYSAM, XIONG CHENRONG, ZHANG FAN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Disclosed are devices, systems and methods for improving fast fail support for error correction in non-volatile memory. An exemplary method includes (a) receiving a codeword from a read operation in afast fail mode, (b) initially configuring a maximum number of iterations (Nmax) and a set of values for a plurality of bit flipping thresholds for performing a decoding operation on the codeword, (c)performing a plurality of decoding iterations (N), each iteration using a subset of bit flipping thresholds, (d) calculating a remaining number of iterations (Nrem) as a difference between Nmax and N, (e) reconfiguring, based on Nrem and a latency requirement of the read operation in the fast fail mode, the set of values for the plurality of bit flipping thresholds to restart the decoding operation, and (f) repeating operations (c) through (e) until the codeword is successfully decoded or Nrem is less than or equal to 0. 本申请公开了一种用于改进非易失性存储器中的错误校正的快速失效支持的装置、系统及方法。一种示例性方法包括:(a)在快速失效模式中从读取操作接收码字,(b)初始配置最大迭代次数(Nmax)和用于多个位