SPLIT-GATE FLASH MEMORY CELL WITH IMPROVED READ PERFORMANCE

Embodiments of the present disclosure provide systems and methods for improving the read window in a split-gate flash memory cell, e.g., by biasing the control gate terminal with a non-zero (positiveor negative) voltage during cell read operations to improve or control the erased state read performa...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MARTIN MATTHEW G, DARYANANI SONU, FESTES GILLES
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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