Multi-component quantum well epitaxial structure for VCSEL and preparation process thereof

The invention relates to the field of multi-quantum well epitaxial structures, and discloses a multi-component quantum well epitaxial structure for a VCSEL and a preparation process thereof. The objective of the invention is to optimize and design parameters of a GaAs/AlxGa1-xAs multi-quantum well epitaxial structure material of an 850nm vertical cavity type surface emitting laser device and further improve modulation characteristics and output efficiency of VCSEL. According to the main scheme, a low-pressure metal organic chemical vapor deposition (LP-MOCVD) growth process is utilized, a designed VCSEL structure model selects semi-insulating GaAs as a substrate for epitaxial material growth, growth experiment research is carried out on main process parameters such as growth temperature, reaction chamber pressure, total carrier gas flow and growth speed, various parameters of the material are adjusted and optimized on the basis of control variables, growth of a complete epitaxial structure is carried out, and