Anion generating device

The invention provides an anion generating device capable of irradiating objects with anions at a right time. After the generation of plasma (P) by a plasma gun (7) is stopped, a control part (50) controls the application of voltage on the basis of a voltage application part (90) according to the me...

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Bibliographische Detailangaben
1. Verfasser:	KITAMI NAOHISA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention provides an anion generating device capable of irradiating objects with anions at a right time. After the generation of plasma (P) by a plasma gun (7) is stopped, a control part (50) controls the application of voltage on the basis of a voltage application part (90) according to the measurement result of a potential measurement part (110). Thus, the control part (50) can irradiate the film-forming objects (11) with the anions at the time when a large number of electrons can be prevented from irradiating the objects. 本发明提供一种负离子生成装置，能够在适当的时机向对象物照射负离子。控制部(50)在停止了等离子体枪(7)的等离子体(P)的生成之后，根据电位测定部(110)的测定结果来控制基于电压施加部(90)的电压的施加。由此，控制部(50)能够在能够避免大量的电子照射到对象物的时机向成膜对象物(11)照射负离子。