ETCHING METHOD AND PLASMA PROCESSING APPARATUS

The invention provides an etching method and a plasma processing apparatus. The etching method is implemented by the plasma processing apparatus having an annular member around a substrate placed on asupport table, and the annular member includes a first annular member and a second annular member disposed further outward than the first annular member. At least a part of the first annular member is disposed in a space between a lower surface of an outer peripheral portion of the substrate and an upper surface of the support table, and the etching method includes a step of adjusting a dielectric constant of the space by the first annular member in accordance with a consumption amount of the second annular member; and a step of etching the substrate. The present invention can improve the etching characteristics of an outer peripheral portion of the substrate. 本发明提供蚀刻方法和等离子体处理装置。蚀刻方法由在载置于支承台的基片的周围具有环状部件的等离子体处理装置实施，该蚀刻方法中，上述环状部件包括第1环状部件和比上述第1环状部件靠外侧配置的第2环状部件，上述第1环状部件的至少一部分配置在上述基片的外周部的下表面与上述支承台的上表面之间的空间，上述蚀刻方法包括：根据