Integrated circuit die

An integrated circuit die includes a magnetic tunnel junction as a storage element of a MRAM cell. The integrated circuit die includes a top electrode positioned on the magnetic tunnel junction. The integrated circuit die includes a first sidewall spacer laterally surrounding the top electrode. The first sidewall spacer acts as a mask for patterning the magnetic tunnel junction. The integrated circuit die includes a second sidewalls spacer positioned on a lateral surface of the magnetic tunnel junction. 一种集成电路晶片包括一磁穿隧接合面作为一MRAM单元的一储存元件。该集成电路晶片包括位于该磁穿隧接合面上的一顶部电极。该集成电路晶片包括横向包围该顶部电极的一第一侧壁间隔件。该第一侧壁间隔件充当用于对该磁穿隧接合面进行图案化的一光罩。该集成电路晶片包括位于该磁穿隧接合面的一侧表面上的一第二侧壁间隔件。