SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

The present invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a control structure positioned in the substrate, a plurality offirst spacers positioned on two sidewalls of the control structure, a plurality of second spacers positioned on sidewalls of the plurality of first spacers, and a first doped region positioned in thesubstrate. The first doped region includes a lightly-doped area, a medium-doped area, and a heavily-doped area. The lightly-doped area of the first doped region abuts against one edge of the controlstructure. The medium-doped area of the first doped region abuts against the lightly-doped area of the first doped region. The heavily-doped area of the first doped region is enclosed by the medium-doped area of the first doped region. 本公开提供一种半导体元件及其制备方法。该半导体元件包含：一基底、位在该基底中的一控制结构、位在该控制结构的二侧壁上的多个第一间隙子、位在所述多个第一间隙子的侧壁上的多个第二间隙子以及位在该基底中的一第一掺杂区。该第一掺杂区具有一轻度掺杂区、一中度掺杂区以及一重度掺杂区。该第一掺杂区的该轻度掺杂区顶抵该控制结构的一边缘。该第一掺杂区的该中度掺杂区顶抵该第一掺杂区的该轻度掺杂区。该第