Polycrystalline silicon film surface treatment method

The invention relates to a polycrystalline silicon film surface treatment method. The method comprises steps of a substrate being provided, the substrate sequentially comprising glass, a silicon nitride layer, a silicon oxide layer and an amorphous silicon layer from bottom to top, and a primary oxide layer being arranged on the amorphous silicon layer; performing a first cleaning step on the substrate to remove impurities on the surface of the substrate; performing a first wet etching step on the substrate from which the impurities have been removed to remove the native oxide layer on the amorphous silicon layer; performing a second cleaning step on the substrate from which the native oxide layer on the amorphous silicon layer has been removed so as to form an oxide layer on the amorphoussilicon layer; performing a second wet etching step on the amorphous silicon layer with the oxide layer to remove a part of the oxide layer on the amorphous silicon layer; washing and drying the substrate; and performing a l